Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRLML0040TRPBF MOSFET N-CH 40V 3.6A SOT23 Infineon Technologies	42,254 In Stock	1 : ¥3.94000 Cut Tape (CT) 3,000 : ¥1.06410 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	3.6A (Ta)	4.5V, 10V	56mOhm @ 3.6A, 10V	2.5V @ 25µA	3.9 nC @ 4.5 V	±16V	266 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
BSC014N06NSTATMA1 MOSFET N-CH 60V 100A TDSON-8 FL Infineon Technologies	9,400 In Stock	1 : ¥29.23000 Cut Tape (CT) 5,000 : ¥13.63340 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	6V, 10V	1.45mOhm @ 50A, 10V	3.3V @ 120µA	104 nC @ 10 V	±20V	8125 pF @ 30 V	-	3W (Ta), 188W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IRFH9310TRPBF MOSFET P-CH 30V 21A/40A PQFN Infineon Technologies	6,254 In Stock	1 : ¥12.89000 Cut Tape (CT) 4,000 : ¥5.32987 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	21A (Ta), 40A (Tc)	4.5V, 10V	4.6mOhm @ 21A, 10V	2.4V @ 100µA	58 nC @ 4.5 V	±20V	5250 pF @ 15 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.