Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

PJA3441_R1_00001 SOT-23, MOSFET Panjit International Inc.	96,009 In Stock	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥0.74805 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	3.1A (Ta)	4.5V, 10V	88mOhm @ 3.1A, 10V	2.5V @ 250µA	6 nC @ 4.5 V	±20V	505 pF @ 20 V	-	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IMW65R030M1HXKSA1 SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies	256 In Stock	1 : ¥127.91000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	58A (Tc)	18V	42mOhm @ 29.5A, 18V	5.7V @ 8.8mA	48 nC @ 18 V	+20V, -2V	1643 pF @ 400 V	-	197W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.