Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V80 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)86A (Tc)
Rds On (Max) @ Id, Vgs
5.8mOhm @ 25A, 10V33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.35V @ 50µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 4.5 V150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2150 pF @ 15 V4500 pF @ 25 V
Power Dissipation (Max)
68W (Tc)75W (Tc)
Supplier Device Package
PowerPAK® SO-8TO-252AA (DPAK)
Package / Case
PowerPAK® SO-8TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRLR8726TRPBF
MOSFET N-CH 30V 86A DPAK
Infineon Technologies
18,087
In Stock
1 : ¥5.09000
Cut Tape (CT)
2,000 : ¥1.70863
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
86A (Tc)
4.5V, 10V
5.8mOhm @ 25A, 10V
2.35V @ 50µA
23 nC @ 4.5 V
±20V
2150 pF @ 15 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PowerPak SO-8L
SQJ479EP-T1_GE3
MOSFET P-CH 80V 32A PPAK SO-8
Vishay Siliconix
18,516
In Stock
1 : ¥9.69000
Cut Tape (CT)
3,000 : ¥4.01919
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
32A (Tc)
4.5V, 10V
33mOhm @ 10A, 10V
2.5V @ 250µA
150 nC @ 10 V
±20V
4500 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.