Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Toshiba Semiconductor and Storage
Series
-U-MOSVII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
600mA (Ta)700mA (Ta)
Rds On (Max) @ Id, Vgs
500mOhm @ 500mA, 4.5V620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA1V @ 1mA
Vgs (Max)
±8V±10V
Input Capacitance (Ciss) (Max) @ Vds
21.3 pF @ 10 V48 pF @ 10 V
Power Dissipation (Max)
360mW (Ta), 2.7W (Tc)500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
CST3CSOT-883
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC-101 SOT-883
PMZ600UNEYL
MOSFET N-CH 20V 600MA DFN1006-3
Nexperia USA Inc.
21,529
In Stock
1 : ¥1.97000
Cut Tape (CT)
10,000 : ¥0.35946
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.2V, 4.5V
620mOhm @ 600mA, 4.5V
950mV @ 250µA
0.7 nC @ 4.5 V
±8V
21.3 pF @ 10 V
-
360mW (Ta), 2.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-883
SC-101, SOT-883
26,744
In Stock
1 : ¥3.04000
Cut Tape (CT)
10,000 : ¥0.47207
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
700mA (Ta)
1.2V, 4.5V
500mOhm @ 500mA, 4.5V
1V @ 1mA
-
±10V
48 pF @ 10 V
-
500mW (Ta)
150°C
Surface Mount
CST3C
SC-101, SOT-883
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.