Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V40 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)12A (Tc)
Rds On (Max) @ Id, Vgs
42mOhm @ 3.8A, 10V47mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
705 pF @ 15 V890 pF @ 20 V
Power Dissipation (Max)
1.7W (Tc)19W (Tc)
Supplier Device Package
PowerPAK® SC-70-6SOT-23-3 (TO-236)
Package / Case
PowerPAK® SC-70-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPak SC-70-6 Single
SIA441DJ-T1-GE3
MOSFET P-CH 40V 12A PPAK SC70-6
Vishay Siliconix
45,309
In Stock
1 : ¥5.42000
Cut Tape (CT)
3,000 : ¥1.82236
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
12A (Tc)
4.5V, 10V
47mOhm @ 4.4A, 10V
2.2V @ 250µA
35 nC @ 10 V
±20V
890 pF @ 20 V
-
19W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
SOT-23-3
SI2347DS-T1-GE3
MOSFET P-CH 30V 5A SOT23-3
Vishay Siliconix
197,936
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.74211
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5A (Tc)
4.5V, 10V
42mOhm @ 3.8A, 10V
2.5V @ 250µA
22 nC @ 10 V
±20V
705 pF @ 15 V
-
1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.