Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS138PW,115 MOSFET N-CH 60V 320MA SOT323 Nexperia USA Inc.	937,089 In Stock	1 : ¥2.30000 Cut Tape (CT) 3,000 : ¥0.39032 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	320mA (Ta)	10V	1.6Ohm @ 300mA, 10V	1.5V @ 250µA	0.8 nC @ 4.5 V	±20V	50 pF @ 10 V	-	260mW (Ta), 830mW (Tc)	-55°C ~ 150°C (TA)	Automotive	AEC-Q101	Surface Mount	SOT-323	SC-70, SOT-323
TP0610K-T1-E3 MOSFET P-CH 60V 185MA SOT23-3 Vishay Siliconix	811,226 In Stock	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥1.04982 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	185mA (Ta)	4.5V, 10V	6Ohm @ 500mA, 10V	3V @ 250µA	1.7 nC @ 15 V	±20V	23 pF @ 25 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SIR180DP-T1-RE3 MOSFET N-CH 60V 32.4A/60A PPAK Vishay Siliconix	2,367 In Stock	1 : ¥14.20000 Cut Tape (CT) 3,000 : ¥6.40190 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	32.4A (Ta), 60A (Tc)	7.5V, 10V	2.05mOhm @ 10A, 10V	3.6V @ 250µA	87 nC @ 10 V	±20V	4030 pF @ 30 V	-	5.4W (Ta), 83.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.