Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS84-7-F MOSFET P-CH 50V 130MA SOT23-3 Diodes Incorporated	434,977 In Stock 12,939,000 Factory	1 : ¥1.97000 Cut Tape (CT) 3,000 : ¥0.32716 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	50 V	130mA (Ta)	5V	10Ohm @ 100mA, 5V	2V @ 1mA	-	±20V	45 pF @ 25 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
CSD18533Q5A MOSFET N-CH 60V 17A/100A 8VSON Texas Instruments	7,033 In Stock	1 : ¥10.51000 Cut Tape (CT) 2,500 : ¥4.34381 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	17A (Ta), 100A (Tc)	4.5V, 10V	5.9mOhm @ 18A, 10V	2.3V @ 250µA	36 nC @ 10 V	±20V	2750 pF @ 30 V	-	3.2W (Ta), 116W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (5x6)	8-PowerTDFN
DMN65D8LFB-7B MOSFET N-CH 60V 260MA 3DFN Diodes Incorporated	451,535 In Stock 380,000 Factory	1 : ¥1.89000 Cut Tape (CT) 10,000 : ¥0.20525 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	260mA (Ta)	5V, 10V	3Ohm @ 115mA, 10V	2V @ 250µA	-	±20V	25 pF @ 25 V	-	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1006-3	3-UFDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.