Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesMicrochip Technologyonsemi
Series
-HEXFET®
Packaging
BagBulkTube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V55 V60 V
Current - Continuous Drain (Id) @ 25°C
175mA (Tj)500mA (Ta)640mA (Tj)17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
70mOhm @ 10A, 10V900mOhm @ 3.5A, 10V5Ohm @ 200mA, 10V6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA3V @ 1mA3.5V @ 10mA4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V60 pF @ 25 V370 pF @ 25 V450 pF @ 25 V
Power Dissipation (Max)
740mW (Ta)740mW (Tc)830mW (Ta)45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
TO-220ABTO-92-3
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-92-3(StandardBody),TO-226_straightlead
BS170
MOSFET N-CH 60V 500MA TO92-3
onsemi
45,884
In Stock
1 : ¥3.37000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
500mA (Ta)
10V
5Ohm @ 200mA, 10V
3V @ 1mA
-
±20V
40 pF @ 10 V
-
830mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-220AB PKG
IRFZ24NPBF
MOSFET N-CH 55V 17A TO220AB
Infineon Technologies
8,444
In Stock
1 : ¥5.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
17A (Tc)
10V
70mOhm @ 10A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
370 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-92-3(StandardBody),TO-226_straightlead
VP2206N3-G
MOSFET P-CH 60V 640MA TO92-3
Microchip Technology
852
In Stock
1 : ¥21.10000
Bag
-
Bag
Active
P-Channel
MOSFET (Metal Oxide)
60 V
640mA (Tj)
5V, 10V
900mOhm @ 3.5A, 10V
3.5V @ 10mA
-
±20V
450 pF @ 25 V
-
740mW (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
TP2104N3-G
MOSFET P-CH 40V 175MA TO92-3
Microchip Technology
753
In Stock
1 : ¥6.40000
Bag
-
Bag
Active
P-Channel
MOSFET (Metal Oxide)
40 V
175mA (Tj)
4.5V, 10V
6Ohm @ 500mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
740mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.