Single FETs, MOSFETs

Results: 2
Manufacturer
Littelfuse Inc.Vishay Siliconix
Series
TrenchFET®TrenchP™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V150 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta), 50A (Tc)44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
8.8mOhm @ 20A, 10V65mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V175 nC @ 10 V
Vgs (Max)
±15V±20V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 20 V13400 pF @ 25 V
Power Dissipation (Max)
3.1W (Ta), 48.1W (Tc)298W (Tc)
Supplier Device Package
TO-252AATO-263AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263AB
IXTA44P15T
MOSFET P-CH 150V 44A TO263
Littelfuse Inc.
3,090
In Stock
1 : ¥51.39000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
150 V
44A (Tc)
10V
65mOhm @ 22A, 10V
4V @ 250µA
175 nC @ 10 V
±15V
13400 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-252
SUD50N04-8M8P-4GE3
MOSFET N-CH 40V 14A/50A TO252
Vishay Siliconix
3,334
In Stock
1 : ¥10.18000
Cut Tape (CT)
2,500 : ¥4.20257
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
14A (Ta), 50A (Tc)
4.5V, 10V
8.8mOhm @ 20A, 10V
3V @ 250µA
56 nC @ 10 V
±20V
2400 pF @ 20 V
-
3.1W (Ta), 48.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.