Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesVishay Siliconix
Series
-SIPMOS®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)2.3A (Tc)7.2A (Ta), 23.6A (Tc)18.6A (Tc)29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
5mOhm @ 15A, 10V50mOhm @ 7A, 10V130mOhm @ 13.2A, 10V150mOhm @ 2.3A, 10V240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA2.5V @ 250µA3V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 4.5 V5.3 nC @ 10 V25 nC @ 10 V33 nC @ 10 V195 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
205 pF @ 30 V330 pF @ 25 V860 pF @ 25 V1377 pF @ 30 V6000 pF @ 15 V
Power Dissipation (Max)
1.9W (Ta)2W (Tc)3W (Tc)3.5W (Ta), 7.8W (Tc)80W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SOICPG-TO252-3SOT-23-3 (TO-236)TO-252-3
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SQ2308CES-T1_BE3
MOSFET N-CH 60V 2.3A SOT23-3
Vishay Siliconix
64,270
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.77589
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.3A (Tc)
4.5V, 10V
150mOhm @ 2.3A, 10V
2.5V @ 250µA
5.3 nC @ 10 V
±20V
205 pF @ 30 V
-
2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-SOIC
SI4459ADY-T1-GE3
MOSFET P-CH 30V 29A 8SO
Vishay Siliconix
86,282
In Stock
1 : ¥12.64000
Cut Tape (CT)
2,500 : ¥5.69278
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
29A (Tc)
4.5V, 10V
5mOhm @ 15A, 10V
2.5V @ 250µA
195 nC @ 10 V
±20V
6000 pF @ 15 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-252-2
DMPH6050SK3-13
MOSFET P-CH 60V 7.2A/23.6A TO252
Diodes Incorporated
33,689
In Stock
270,000
Factory
1 : ¥5.17000
Cut Tape (CT)
2,500 : ¥1.96165
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
7.2A (Ta), 23.6A (Tc)
4.5V, 10V
50mOhm @ 7A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
1377 pF @ 30 V
-
1.9W (Ta)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-23(TO-236)
SQ2364EES-T1_BE3
N-CHANNEL 60-V (D-S) 175C MOSFET
Vishay Siliconix
6,664
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.77589
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Tc)
1.5V, 4.5V
240mOhm @ 2A, 4.5V
1V @ 250µA
2.5 nC @ 4.5 V
±8V
330 pF @ 25 V
-
3W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO252-3
SPD18P06PGBTMA1
MOSFET P-CH 60V 18.6A TO252-3
Infineon Technologies
7,371
In Stock
1 : ¥11.17000
Cut Tape (CT)
2,500 : ¥4.63378
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
18.6A (Tc)
10V
130mOhm @ 13.2A, 10V
4V @ 1mA
33 nC @ 10 V
±20V
860 pF @ 25 V
-
80W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.