Single FETs, MOSFETs

Results: 3
Manufacturer
onsemiSTMicroelectronicsVishay Siliconix
Series
DeepGATE™, STripFET™ VIPowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)12A (Ta), 14A (Tc)80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
4mOhm @ 40A, 10V9.7mOhm @ 12A, 10V39mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 4.5 V26 nC @ 10 V80 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
1020 pF @ 10 V1850 pF @ 20 V4300 pF @ 25 V
Power Dissipation (Max)
750mW (Ta)2.3W (Ta), 30W (Tc)110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-MLP (3.3x3.3)DPAKSOT-23-3 (TO-236)
Package / Case
8-PowerWDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2323DS-T1-GE3
MOSFET P-CH 20V 3.7A SOT23-3
Vishay Siliconix
17,421
In Stock
1 : ¥5.83000
Cut Tape (CT)
3,000 : ¥2.20368
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
1.8V, 4.5V
39mOhm @ 4.7A, 4.5V
1V @ 250µA
19 nC @ 4.5 V
±8V
1020 pF @ 10 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8 POWER WDFN
FDMC8327L
MOSFET N-CH 40V 12A/14A 8MLP
onsemi
11,127
In Stock
1 : ¥9.44000
Cut Tape (CT)
3,000 : ¥3.89919
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
12A (Ta), 14A (Tc)
4.5V, 10V
9.7mOhm @ 12A, 10V
3V @ 250µA
26 nC @ 10 V
±20V
1850 pF @ 20 V
-
2.3W (Ta), 30W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
MFG_DPAK(TO252-3)
STD120N4LF6
MOSFET N-CH 40V 80A DPAK
STMicroelectronics
39,707
In Stock
1 : ¥15.76000
Cut Tape (CT)
2,500 : ¥7.10989
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
80A (Tc)
5V, 10V
4mOhm @ 40A, 10V
3V @ 250µA
80 nC @ 10 V
±20V
4300 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.