Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SQ2308CES-T1_BE3 MOSFET N-CH 60V 2.3A SOT23-3 Vishay Siliconix	64,270 In Stock	1 : ¥5.25000 Cut Tape (CT) 3,000 : ¥1.77589 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2.3A (Tc)	4.5V, 10V	150mOhm @ 2.3A, 10V	2.5V @ 250µA	5.3 nC @ 10 V	±20V	205 pF @ 30 V	-	2W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
DMPH6050SK3-13 MOSFET P-CH 60V 7.2A/23.6A TO252 Diodes Incorporated	33,689 In Stock 270,000 Factory	1 : ¥5.17000 Cut Tape (CT) 2,500 : ¥1.96165 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	7.2A (Ta), 23.6A (Tc)	4.5V, 10V	50mOhm @ 7A, 10V	3V @ 250µA	25 nC @ 10 V	±20V	1377 pF @ 30 V	-	1.9W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
SPD18P06PGBTMA1 MOSFET P-CH 60V 18.6A TO252-3 Infineon Technologies	7,371 In Stock	1 : ¥11.17000 Cut Tape (CT) 2,500 : ¥4.63378 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	18.6A (Tc)	10V	130mOhm @ 13.2A, 10V	4V @ 1mA	33 nC @ 10 V	±20V	860 pF @ 25 V	-	80W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.