Single FETs, MOSFETs

Results: 2
Series
OptiMOS™OptiMOS™ 6
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
80 V100 V
Current - Continuous Drain (Id) @ 25°C
25A (Ta), 230A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
2.24mOhm @ 50A, 10V8.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.3V @ 147µA3.8V @ 31µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1820 pF @ 40 V6880 pF @ 50 V
Power Dissipation (Max)
3W (Ta), 254W (Tc)63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TSDSON-8-FLPG-TSON-8-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
2,577
In Stock
1 : ¥38.01000
Cut Tape (CT)
5,000 : ¥17.75781
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
25A (Ta), 230A (Tc)
8V, 10V
2.24mOhm @ 50A, 10V
3.3V @ 147µA
91 nC @ 10 V
±20V
6880 pF @ 50 V
-
3W (Ta), 254W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-3
8-PowerTDFN
TSDSON-8
BSZ084N08NS5ATMA1
MOSFET N-CH 80V 40A TSDSON
Infineon Technologies
35,597
In Stock
1 : ¥12.81000
Cut Tape (CT)
5,000 : ¥5.03079
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
40A (Tc)
6V, 10V
8.4mOhm @ 20A, 10V
3.8V @ 31µA
25 nC @ 10 V
±20V
1820 pF @ 40 V
-
63W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.