Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS138-7-F MOSFET N-CH 50V 200MA SOT23-3 Diodes Incorporated	153,568 In Stock	1 : ¥1.64000 Cut Tape (CT) 3,000 : ¥0.28094 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	10V	3.5Ohm @ 220mA, 10V	1.5V @ 250µA	-	±20V	50 pF @ 10 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRLML6401TRPBF MOSFET P-CH 12V 4.3A SOT23 Infineon Technologies	125,862 In Stock	1 : ¥3.28000 Cut Tape (CT) 3,000 : ¥0.88633 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	4.3A (Ta)	1.8V, 4.5V	50mOhm @ 4.3A, 4.5V	950mV @ 250µA	15 nC @ 5 V	±8V	830 pF @ 10 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
BSS87,115 MOSFET N-CH 200V 400MA SOT89 Nexperia USA Inc.	215,382 In Stock	1 : ¥3.04000 Cut Tape (CT) 1,000 : ¥0.91638 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	200 V	400mA (Ta)	10V	3Ohm @ 400mA, 10V	2.8V @ 1mA	-	±20V	120 pF @ 25 V	-	580mW (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-89	TO-243AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.