Gate Drivers

Results: 2
Manufacturer
Infineon TechnologiesTexas Instruments
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Driven Configuration
Half-BridgeHigh-Side and Low-Side
Channel Type
3-PhaseSynchronous
Number of Drivers
23
Gate Type
IGBT, N-Channel MOSFETN-Channel MOSFET
Voltage - Supply
5V ~ 20V10V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 2V0.8V, 3V
Current - Peak Output (Source, Sink)
210mA, 360mA750mA, 1.5A
Input Type
Inverting, Non-InvertingNon-Inverting
High Side Voltage - Max (Bootstrap)
105 V600 V
Rise / Fall Time (Typ)
12ns, 12ns100ns, 50ns
Operating Temperature
-40°C ~ 125°C (TA)-40°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)24-VFQFN Exposed Pad
Supplier Device Package
8-SOIC24-VQFN (4x4)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
24 VFQFN
DRV8300NRGER
100-V MAX SIMPLE 3-PHASE GATE DR
Texas Instruments
13,991
In Stock
1 : ¥12.56000
Cut Tape (CT)
3,000 : ¥5.76495
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
High-Side and Low-Side
3-Phase
3
N-Channel MOSFET
5V ~ 20V
0.8V, 2V
750mA, 1.5A
Inverting, Non-Inverting
105 V
12ns, 12ns
-40°C ~ 125°C (TA)
Surface Mount
24-VFQFN Exposed Pad
24-VQFN (4x4)
IR2104STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
Infineon Technologies
20,204
In Stock
1 : ¥13.30000
Cut Tape (CT)
2,500 : ¥5.63485
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Synchronous
2
IGBT, N-Channel MOSFET
10V ~ 20V
0.8V, 3V
210mA, 360mA
Non-Inverting
600 V
100ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
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Gate Drivers

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.