Bipolar RF Transistors

Results: 3
Manufacturer
NXP USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Voltage - Collector Emitter Breakdown (Max)
12V20V25V
Frequency - Transition
600MHz800MHz10GHz
Noise Figure (dB Typ @ f)
0.7dB @ 900MHz-
Gain
18dB-
Power - Max
225mW450mW
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 10V60 @ 5mA, 8V120 @ 4mA, 10V
Current - Collector (Ic) (Max)
30mA50mA-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
SOT-23 (TO-236AB)SOT-23-3SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-23-3
MMBTH81
RF TRANS PNP 20V 600MHZ SOT23-3
onsemi
4,750
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.55879
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
20V
600MHz
-
-
225mW
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SOT-23
BFU520AR
RF TRANS NPN 12V 10GHZ TO236AB
NXP USA Inc.
1,386
In Stock
1 : ¥5.09000
Cut Tape (CT)
3,000 : ¥1.96340
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
12V
10GHz
0.7dB @ 900MHz
18dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23 (TO-236AB)
SOT 23-3
MMBTH10-4LT1G
RF TRANS NPN 25V 800MHZ SOT23-3
onsemi
52,595
In Stock
39,000
Factory
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.27484
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
25V
800MHz
-
-
225mW
120 @ 4mA, 10V
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
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of 3

Bipolar RF Transistors


Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.