Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
OptiMOS™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta), 50A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 20A, 10V12.3mOhm @ 10.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1075 pF @ 30 V3215 pF @ 30 V
Power Dissipation (Max)
2.1W (Ta), 36W (Tc)3.1W (Ta), 69W (Tc)
Supplier Device Package
PG-TSDSON-8-FLTO-252AA
Package / Case
8-PowerTDFNTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TSDSON-8
BSZ100N06NSATMA1
MOSFET N-CH 60V 40A TSDSON
Infineon Technologies
23,696
In Stock
1 : ¥6.90000
Cut Tape (CT)
5,000 : ¥2.72505
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
40A (Tc)
6V, 10V
10mOhm @ 20A, 10V
3.3V @ 14µA
15 nC @ 10 V
±20V
1075 pF @ 30 V
-
2.1W (Ta), 36W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
TO-252AA
FDD5353
MOSFET N-CH 60V 11.5A/50A DPAK
onsemi
4,758
In Stock
1 : ¥12.81000
Cut Tape (CT)
2,500 : ¥5.31289
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
11.5A (Ta), 50A (Tc)
4.5V, 10V
12.3mOhm @ 10.7A, 10V
3V @ 250µA
65 nC @ 10 V
±20V
3215 pF @ 30 V
-
3.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.