Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
HEXFET®TrenchFET®TrenchFET® Gen V
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
12.5A (Ta), 50A (Tc)17A (Tc)85.9A (Ta), 350.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
0.47mOhm @ 20A, 10V25.2mOhm @ 12.5A, 10V105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 5 V160 nC @ 10 V180 nC @ 10 V
Vgs (Max)
+16V, -12V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V4700 pF @ 40 V8960 pF @ 15 V
Power Dissipation (Max)
6.25W (Ta), 104.1W (Tc)8.3W (Ta), 136W (Tc)79W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PowerPAK® SO-8TO-252AATO-252AA (DPAK)
Package / Case
PowerPAK® SO-8TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRLR3410TRPBF
MOSFET N-CH 100V 17A DPAK
Infineon Technologies
38,736
In Stock
1 : ¥8.70000
Cut Tape (CT)
2,000 : ¥3.61310
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
4V, 10V
105mOhm @ 10A, 10V
2V @ 250µA
34 nC @ 5 V
±16V
800 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PowerPAK SO-8 Single
SIR500DP-T1-RE3
N-CHANNEL 30 V (D-S) 150C MOSFET
Vishay Siliconix
6,999
In Stock
1 : ¥12.97000
Cut Tape (CT)
3,000 : ¥5.83725
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
85.9A (Ta), 350.8A (Tc)
4.5V, 10V
0.47mOhm @ 20A, 10V
2.2V @ 250µA
180 nC @ 10 V
+16V, -12V
8960 pF @ 15 V
-
6.25W (Ta), 104.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-252
SUD50P08-25L-BE3
MOSFET P-CH 80V 12.5A/50A DPAK
Vishay Siliconix
4,118
In Stock
1 : ¥21.02000
Cut Tape (CT)
2,000 : ¥9.48430
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
12.5A (Ta), 50A (Tc)
4.5V, 10V
25.2mOhm @ 12.5A, 10V
3V @ 250µA
160 nC @ 10 V
±20V
4700 pF @ 40 V
-
8.3W (Ta), 136W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.