Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
150mA (Ta)240mA (Ta)
Rds On (Max) @ Id, Vgs
2.5Ohm @ 240mA, 10V8Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.68 nC @ 4.5 V1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 30 V37 pF @ 30 V
Power Dissipation (Max)
298mW (Ta)357mW (Ta)
Supplier Device Package
SOT-23SOT-323
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS84 RFG
-60, -0.15, SINGLE P-CHANNEL
Taiwan Semiconductor Corporation
6,949
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.32984
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
150mA (Ta)
4.5V, 10V
8Ohm @ 150mA, 10V
2V @ 250µA
1.9 nC @ 10 V
±20V
37 pF @ 30 V
-
357mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
4,930
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.26537
Tube
-
Cut Tape (CT)
Digi-Reel®
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
240mA (Ta)
4.5V, 10V
2.5Ohm @ 240mA, 10V
2.5V @ 250µA
0.68 nC @ 4.5 V
±20V
30 pF @ 30 V
-
298mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.