Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesRohm Semiconductor
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)2.6A (Ta)3.3A (Ta)3.6A (Ta)5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.8V, 10V2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
29mOhm @ 5A, 4.5V56mOhm @ 3.6A, 10V72mOhm @ 4.2A, 10V135mOhm @ 2.6A, 4.5V2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA1.1V @ 10µA1.3V @ 250µA2.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 4.5 V3.9 nC @ 4.5 V6.8 nC @ 4.5 V15.9 nC @ 10 V
Vgs (Max)
±8V±12V±16V
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V220 pF @ 16 V266 pF @ 25 V650 pF @ 25 V708 pF @ 15 V
Power Dissipation (Max)
200mW (Ta)700mW (Ta)1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
Micro3™/SOT-23SOT-23-3SST3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP3068L-7
MOSFET P-CH 30V 3.3A SOT23
Diodes Incorporated
165,375
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.60561
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.3A (Ta)
1.8V, 10V
72mOhm @ 4.2A, 10V
1.3V @ 250µA
15.9 nC @ 10 V
±12V
708 pF @ 15 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML6344TRPBF
MOSFET N-CH 30V 5A MICRO3/SOT23
Infineon Technologies
131,647
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.02907
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5A (Ta)
2.5V, 4.5V
29mOhm @ 5A, 4.5V
1.1V @ 10µA
6.8 nC @ 4.5 V
±12V
650 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML0040TRPBF
MOSFET N-CH 40V 3.6A SOT23
Infineon Technologies
42,254
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.06410
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
3.6A (Ta)
4.5V, 10V
56mOhm @ 3.6A, 10V
2.5V @ 25µA
3.9 nC @ 4.5 V
±16V
266 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
RUC002N05T116
RUC002N05T116
MOSFET N-CH 50V 200MA SST3
Rohm Semiconductor
576,951
In Stock
1 : ¥2.55000
Cut Tape (CT)
3,000 : ¥0.26523
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
1.2V, 4.5V
2.2Ohm @ 200mA, 4.5V
1V @ 1mA
-
±8V
25 pF @ 10 V
-
200mW (Ta)
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML2246TRPBF
MOSFET P-CH 20V 2.6A SOT23
Infineon Technologies
39,624
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83713
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
135mOhm @ 2.6A, 4.5V
1.1V @ 10µA
2.9 nC @ 4.5 V
±12V
220 pF @ 16 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.