EPC's application note on eGaN® FET power conversion.

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Assembling EPC's eGaN FETs.

Efficient Power Conversion Corporation has launched a family of second generation enhancement mode gallium nitride (eGaN) FETs. All of these new products are lead free, halogen free, RoHS compliant, and have significant improvements in their overall performance.

EPC’s enhancement mode gallium nitride (eGaN®) power transistors are a new generation of power switches offering unsurpassed performance over silicon power MOSFETs in switching speed and conduction losses with superior thermal characteristics.

In an effort to make the transition from EPC power MOSFETs to the new generation of power management devices as easy as possible, this paper describes the general operation of enhancement mode GaN devices, gate drive techniques, circuit layout considerations, thermal management techniques, and testing considerations.

The ultra high speed switching capabilities of EPC eGaN FETs enable a new state-of-the-art in power density

Safe Operating Area (SOA) curves describe the range of voltage and current and the length of time under which an EPC device may operate without failure.

For the past three decades, power management efficiency and cost have shown steady improvement as innovations in EPC power MOSFET structures, technology, and circuit topologies have paced the growing need for electrical power in our daily lives.

The basic requirements for EPC power semiconductors are efficiency, reliability, controllability, and cost effectiveness.

Fourth generation of EPC GaN-on-silicon enhancement mode transistors (eGaN FETs) sets new performance records.

Thermal resistance is a major factor in determining the capabilities of discrete power devices.

The EPC GaN transistors generally behave like n-channel power MOSFETs. Common curve tracers, parametric analyzers, and automatic discrete device parametric testers that are used for an n-channel power MOSFET will be applicable for the characterization of GaN transistors.

In this application note we present the new EPC EPC8000 series devices and highlight some of the key features that make this transistor family suitable for high frequency applications.

A detailed description of the EPC enhancement mode transistor physical characteristics is given including the visual criteria all devices must meet before they are released for shipment to customers.

eGaN® FETs from EPC offer significantly lower capacitance and inductance and zero QRR in a smaller device for a given RDS(on) than comparable MOSFETs.