Cambridge GaN Devices
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特色产品

CGD65B200S2-T13
650V GAN HEMT, 200MOHM, DFN5X6.

CGD65B130S2-T13
650V GAN HEMT, 130MOHM, DFN5X6.

CGD65A055S2-T07
650V GAN HEMT, 55MOHM, DFN8X8. W

CGD65A130S2-T13
650V GAN HEMT, 130MOHM, DFN8X8.
关于 Cambridge GaN Devices
Cambridge GaN Devices (CGD) is a fabless semiconductor company spun out by Prof. Florin Udrea and Dr. Giorgia Longobardi from Cambridge University in 2016 to exploit a revolutionary technology in power devices. Our mission is to shape the future of power electronics by delivering extremely efficient and easy-to-use transistor. CGD designs, develops and commercializes GaN transistors and ICs enabling a radical step change in energy efficiency and compactness and is suitable for high-volume production.