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Anbon Semiconductor
SiC MOS
SiC has a high carrier saturation drift speed, thermal conductivity, can be used to manufacture a variety of high-frequency, efficiency, high-temperature-resistant and high-power devices.
Transient Voltage Suppressor, Automotive Grade
Providing stable protection for automotive electronics 12V and 24V power, the main packages are DO-218AB, PRESSFIT, SMA/B/C. Pulse power varies from 200W to 30,000W.
Bypass Diode
Anbon's various types of photovoltaic diodes/bypass diodes are widely used in the photovoltaic field with ultra-low on-state voltage drop and reverse leakage.
TOLL Package - High Density High Power MOS
This package provides high current capability with excellent heat dissipation in a small footprint to meet the high performance needs of customer applications.
Patented Package SMA-NT/SOD-123NT Maximizes Power Density in the Same Volume in the Industry
Maximum pulse power up to 1,500W in SMA-NT package (compared to industry max of 600W), max pulse power up to 600W in SOD-123NT package (compared to industry max of 400W).
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关于 Anbon Semiconductor
Anbon (AS) is a world-leading manufacturer of the chip and package of SiC Diodes, Si Diodes, and MOS in semiconductor industry. Their core technology has the advantages of upstream and downstream integration. AS focuses on the development and production of power semiconductor devices such as MOS, TVS, Schottky diodes, and more. AS products are divided into automotive, industrial, and commercial.
