Schottky Barrier Diodes, made by junction of N-type silicon with a metal, have certain important advantages against standard P-N junction-based silicon diodes. The most important is very low Forward Voltage drop, which means lower conduction losses against standard ones. At the same time, very low Reverse Recovery time (or Reverse Recovery charge) allows them to be used for relatively high switching frequencies. The small capacitance of the junction makes the design easier. This makes them a switching device of choice for rectifying diodes in small-output voltage power supplies. Another nice feature is further decrease of forward voltage at elevated temperatures.