TSHF5211 IR Emitter

            TSHF5211 IR Emitter
                    Vishay IR emitters deliver higher radiant intensity and faster switching times than previous-generation devices
    

Image of Vishay Semi Opto TSHF5211 IR Emitter Vishay offers 890 nm high-speed infrared (IR) emitting diodes in a clear, untinted leaded plastic package. Based on surface emitter technology, the TSHF5211 combines an excellent -1.0 mV/K temperature coefficient of V_Fwith 50% higher radiant intensity and faster rise and fall times than previous-generation devices. The emitter offers good spectral matching with silicon photodetectors. These emitters are suitable for industrial sensing applications.

Features

Package type: leaded
Package form: T-1¾
Dimensions: Ø 5 mm
Leads with stand-off
Peak wavelength: λp = 890 nm
High reliability

High radiant power and instensity
Angle of half intensity: ϕ = ±10°
Low forward voltage
Good spectral matching to Si photodetectors