STMicroelectronics' low voltage MOSFETs are critical contributors to the efficiency of switching topologies used in DC/DC converter and motor control applications. For example, with a synchronous buck converter, the major contributions to the losses in high frequency switching are switching losses in the high side (H-S) FET (control FET) and conduction losses in the low side (L-S) FET (sync FET). ST's STripFET V technology has one of the best switching figures of merit (RDS(on) * Qg) and thus, is ideal for H-S. Additionally, the STripFET VI DeepGATE™ has one of the lowest RDS (on) values per area and thus, is better for L-S. ST offers a series of 30-volt (H5 and H6) and 40-volt (F5 and F6) FETs in PowerFLAT™ packages to combine the features of the latest STripFET technologies for H-S and L-S combinations with the improved power density and thermal capability of PowerFLAT packaging.
| Features |
- RDS(on) * Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
|
- High avalanche ruggedness
- Low gate drive power losses
- High power density
|
设置
快速交货
免运费
国际贸易术语
支付类型
市场产品
STMicroelectronics' low voltage MOSFETs are critical contributors to the efficiency of switching topologies used in DC/DC converter and motor control applications. For example, with a synchronous buck converter, the major contributions to the losses in high frequency switching are switching losses in the high side (H-S) FET (control FET) and conduction losses in the low side (L-S) FET (sync FET). ST's STripFET V technology has one of the best switching figures of merit (RDS(on) * Qg) and thus, is ideal for H-S. Additionally, the STripFET VI DeepGATE™ has one of the lowest RDS (on) values per area and thus, is better for L-S. ST offers a series of 30-volt (H5 and H6) and 40-volt (F5 and F6) FETs in PowerFLAT™ packages to combine the features of the latest STripFET technologies for H-S and L-S combinations with the improved power density and thermal capability of PowerFLAT packaging.
