The LM5114 is a single low-side gate driver with 7.6A/1.3A peak sink/source drive current capability. It can be used to drive standard Si MOSFETs or enhancement mode GaN FETs in boost type configurations or to drive secondary synchronous FETs in isolated topologies.

The EPC9118 demonstration board is a 5 V output, 400 kHz buck converter with a 20 A maximum output current

This demonstration board is a resonant LLC converter dedicated to any kind of industrial application where minimum size and high efficiency is required, based on MasterGaN1.

The EPC9143 1/16th brick evaluation power module is designed for 48V to 12V DC/DC applications.

The EPC9141 demonstration board is a 12 V output, 400 kHz buck converter with a 10 A maximum output current and 30 V to 54 V input voltage range (48 V nominal).

The LM5113 evaluation board is designed to provide the design engineers with a synchronous buck converter to evaluate the LM5113, a 100V half-bridge enhancement mode Gallium Nitride (GaN) FET driver. The active clamping voltage mode controller LM5025 is used to generate the PWM signals of the buck switch and the synchronous switch.

The EPC9137 evaluation power module is designed for 48 V to/from 12 V DC-to-DC applications. It features the EPC2206 – enhancement mode eGaN® field effect transistors (FETs) with AEC-Q101 qualification.

The EPC9102 demonstration board is a 12 V output, 375 kHz phase shifted full bridge (PSFB) eighth brick converter with 17 A maximum output current and 36 V to 60 V input voltage range. The demonstration board features the EPC2001 enhancement mode (eGaN®) field effect transistors (FETs), as well as the first eGaN FET specific integrated circuit driver – the National LM5113 from Texas Instruments. …

The EPC9528 module is programmed as a Buck converter by default. To change to Boost converter, please re-program the module with the boost firmware available at the EPC website. Using the incorrect firmware could result in damage.

The EPC9130 development board is a 500 kHz switching frequency, 48 V nominal input voltage, 60 A maximum output current, 5-phase intermediate bus converter (IBC) with onboard microcontroller and gate drives, featuring the 100 V EPC2045 enhancement mode (eGaN) field effect transistor (FET).