EPC9067: 2.7A, 0 ~ 65V, Half Bridge

The EPC9067 development board is a 65 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives,featuring the EPC8009 enhancement mode (eGaN®) field effect transistor(FET). The gate driver has been configured with a synchronous FET bootstrap circuit featuring the EPC2038 eGaN FET that eliminates highside device losses induced by the reverse recovery losses of the internal bootstrap diode of the gate driver.

The purpose of this development board is to simplify the evaluation process of the EPC8009 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter. The inclusion of the synchronous FET bootstrap circuit enables significant increase in operating frequency capability of the half bridge circuit.

The EPC9067 development board is 2” x 1.5” and has two EPC8009 eGaNFETs in a half bridge configuration using Texas Instruments LM5113 gatedriver with supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. The board includes pads for the inclusion of customer components to facilitate testing in a Buck converter or ZVSclass-D amplifier configurations. A complete block diagram of the circuit is given in figure 1.

For more information on the EPC8009 and EPC2038 eGaN FETs please refer to the datasheet. The datasheet should be read in conjunction with this quick start guide. GaN